Laser Writing of GaN/Ga₂O₃ Heterojunction Photodetector Arrays

Photodetectors play a crucial role in converting light signals into electrical and have significant applications various fields such as communications, imaging, sensing. However, the fabrication of photodetector is complex process that involves precise control surface preparation, lithography, deposition techniques. Here study demonstrates GaN/Ga2O3 heterojunctions can be fabricated utilizing laser processing to transform GaN Ga2O3. The exhibit good reproducibility, uniformity, ability operate under zero bias, with responsivity 110.22 mA W−1, detection rate 5.56 × 1011 jones, an external quantum efficiency 42.34%. Moreover, 8 array based on heterojunction via writing demonstrated ultraviolet imaging capabilities. This report presents pioneering using writing. findings offer versatile scalable approach for production large-area arrays.